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| savantic semiconductor product specification silicon npn power transistors BU941 description with to-3 package high voltage darlington applications high ruggedness electronic ignitions. high voltage ignition coil driver pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i cm collector current-peak 30 a i b base current 1 a i bm base current (peak) 5 a p t total power dissipation t c =25 180 w t j junction temperature -65~200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 0.97 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BU941 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; i b =0;l=10mh 400 v v ce (sat-1) collector-emitter saturation voltage i c =8 a;i b =100ma 1.6 v v ce (sat-2) collector-emitter saturation voltage i c =10 a;i b =250ma 1.8 v v ce (sat-3) collector-emitter saturation voltage i c =12 a;i b =300ma 2.0 v v be ( sat-1) base-emitter saturation voltage i c =8 a;i b =100ma 2.2 v v be (sat-2) base-emitter saturation voltage i c =10 a;i b =250ma 2.5 v v be (sat-3) base-emitter saturation voltage i c =12 a;i b =300ma 2.7 v i ces collector cut-off current v ce =500v;v be =0 t j =125 0.1 0.5 ma i ceo collector cut-off current v ce =450v;i b =0 t j =125 0.1 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 20 ma h fe dc current gain i c =5a ; v ce =10v 300 v f diode forward voltage i f =10a 2.5 v savantic semiconductor product specification 3 silicon npn power transistors BU941 package outline fig.2 outline dimensions |
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